DCR1006SF26
GEC PLESSEY SEMICONDUCTORS
- 生命周期状态Transferred
- 说明Silicon Controlled Rectifier, 990A I(T), 2600V V(DRM)
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Trigger Device TypeSCR
- Holding Current-Max (mA)500
- Leakage Current-Max (mA)100
- On-state Current-Max (A)990
- DC Gate Trigger Voltage-Max (V)3.5
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-55
- DC Gate Trigger Current-Max (mA)200
- Non-Repetitive Pk On-state Cur (A)16000
- Repetitive Peak Off-state Voltage (V)2600
- Circuit Commutated Turn-off Time-Nom (us)450
- Critical Rate of Rise of Off-state Voltage-Min (V/us)1000
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DCR1006SF26