TT ELECTRONICS PLC D1203UKG4 | 搜芯易Sourcengine

TT ELECTRONICS PLC D1203UKG4

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-CRFM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e4
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Finish
GOLD
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
30
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Operating Temperature-Max (Cel)
200