TT ELECTRONICS PLC D1083UKR3 | 搜芯易Sourcengine

TT ELECTRONICS PLC D1083UKR3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-263AA
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-263AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
20
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
70
Operating Temperature-Max (Cel)
150