Central Semiconductor Corp. CTLDM601N | 搜芯易Sourcengine

Central Semiconductor Corp. CTLDM601N

生命周期状态
Active-Unconfirmed
说明
Small Signal Field-Effect Transistor, 0.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
0.1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Drain-source On Resistance-Max (ohm)
7.5