Renesas Technology Corp. CT90AM-18 | 搜芯易Sourcengine

Renesas Technology Corp. CT90AM-18

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 60A I(C), 900V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
150
Gate-emitter Voltage-Max (V)
25
Turn-off Time-Nom (toff) (ns)
300
Collector Current-Max (IC) (A)
60
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
900