Mitsubishi Electric Corp. CT20VM-8 | 搜芯易Sourcengine

Mitsubishi Electric Corp. CT20VM-8

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 130A I(C), 400V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
30
Collector Current-Max (IC) (A)
130
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
7
Collector-emitter Voltage-Max (V)
400