Samsung Semiconductor, Inc. CS-500300 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. CS-500300

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N13
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL SEMICONDUCTOR
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Terminals
13
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
8
Operating Temperature-Max (Cel)
175