CR2480M
TYCO ELECTRONICS M/A-COM
- 生命周期状态Transferred
- 说明RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-CDFM-F4
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)10
- Drain Current-Max (ID) (A)28
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)14
- Operating Temperature-Max (Cel)200
- Power Dissipation Ambient-Max (W)233
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CR2480M