CHAMPION MICROELECTRONIC CORP CMT03N60N220 | 搜芯易Sourcengine

CHAMPION MICROELECTRONIC CORP CMT03N60N220

生命周期状态
Contact Mfr
说明
Power Field-Effect Transistor, 3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
3 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
75 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
290 mJ
Drain-source On Resistance-Max
2.2 ohm
Pulsed Drain Current-Max (IDM)
14 A