CMLDM7120TG
Central Semiconductor Corp.
- 生命周期状态Active-Unconfirmed
- 说明Power Field-Effect Transistor, 1A I(D), 20V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.35
- Drain Current-Max (ID) (A)1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Feedback Cap-Max (Crss) (pF)45
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-65
- Drain-source On Resistance-Max (ohm)0.14
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CMLDM7120TG