Mitsubishi Electric Corp. CM75TU-12F | 搜芯易Sourcengine

Mitsubishi Electric Corp. CM75TU-12F

生命周期状态
NRFND
说明
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.2 V
JESD-30 Code
R-XUFM-X17
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RTC
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
17
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
75 A
Power Dissipation-Max (Abs)
290 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED