Mitsubishi Electric Corp. CM75BU-12H | 搜芯易Sourcengine

Mitsubishi Electric Corp. CM75BU-12H

生命周期状态
NRFND
说明
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-XUFM-X12
Configuration
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
3
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
4
Number of Terminals
12
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
310
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
75
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED