CM5583TIN/LEAD
Central Semiconductor Corp.
- 生命周期状态Discontinued
- 说明RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, PNP, TO-39
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-39
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- J-STD-609 Codee0
- VCEsat-Max (V)0.8
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypePNP
- Highest Frequency BandHIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)15
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.5
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-65
- Collector-emitter Voltage-Max (V)30
- Power Dissipation Ambient-Max (W)1
- Collector-base Capacitance-Max (pF)5
- Transition Frequency-Nom (fT) (MHz)1300
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CM5583TIN/LEAD