Mitsubishi Electric Corp. CM50MXUBP-13T | 搜芯易Sourcengine

Mitsubishi Electric Corp. CM50MXUBP-13T

生命周期状态
Active
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-D31
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
VCEsat-Max (V)
1.85
Case Connection
ISOLATED
Terminal Position
UPPER
Fall Time-Max (ns)
600
Number of Elements
7
Number of Terminals
31
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
200
Power Dissipation-Max (W)
270
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
600
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
1000
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.6
Collector-emitter Voltage-Max (V)
650
Screening Level / Reference Standard
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED