Mitsubishi Electric Corp. CM30TF-12H | 搜芯易Sourcengine

Mitsubishi Electric Corp. CM30TF-12H

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.8 V
JESD-30 Code
R-XUFM-D17
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
SUPER FAST RECOVERY
Number of Elements
6
Number of Terminals
17
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
120 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
200 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
30 A
Power Dissipation-Max (Abs)
150 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED