CM20MD3-12H
Powerex Inc., U.S.A.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.8 V
- JESD-30 CodeR-XUFM-X21
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND SINGLE PHASE DIODE BRIDGE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements6
- Number of Terminals21
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)20 A
- Power Dissipation-Max (Abs)57 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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CM20MD3-12H