Mitsubishi Electric Corp. CM200HG-130H | 搜芯易Sourcengine

Mitsubishi Electric Corp. CM200HG-130H

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 200A I(C), 6300V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
2900
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
1550
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
8700
Collector Current-Max (IC) (A)
200
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
6300