Mitsubishi Electric Corp. CM150E3U-24F | 搜芯易Sourcengine

Mitsubishi Electric Corp. CM150E3U-24F

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.4 V
JESD-30 Code
R-XUFM-X5
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
5
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Application
GENERAL PURPOSE SWITCHING
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
150 A
Power Dissipation-Max (Abs)
600 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED