CM100TL-12NF
Mitsubishi Electric Corp.
- 生命周期状态Active
- 说明Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X20
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.2
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements6
- Number of Terminals20
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)540
- Transistor Element MaterialSILICON
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)100
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
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CM100TL-12NF