CM100TF-28H
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 100A I(C), 1400V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max4.2 V
- JESD-30 CodeR-XUFM-X19
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureSUPER FAST RECOVERY
- Number of Elements6
- Number of Terminals19
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)250 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)300 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)100 A
- Power Dissipation-Max (Abs)780 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1400 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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CM100TF-28H