CHT-NMOS8010-TO254-T
CISSOID S.A.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- 说明Power Field-Effect Transistor, 3.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-254
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishNICKEL
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)3.3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)80
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)13.5
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CHT-NMOS8010-TO254-T