CGH80030D
WOLFSPEED INC
- 生命周期状态Transferred
- RoHS符合RoHS标准
- 说明RF Power Field-Effect Transistor, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N10
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Number of Terminals10
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandC BAND
- Drain Current-Max (ID) (A)3
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)120
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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CGH80030D