INFINEON TECHNOLOGIES AG CFY77-10 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG CFY77-10

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
GATE
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
9.5 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.06 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
3.5 V
Operating Temperature-Max
150 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.18 W