INFINEON TECHNOLOGIES AG CFY76-10 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG CFY76-10

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, P-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
GATE
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
9.5 dB
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
0.06 A
Highest Frequency Band
X BAND
DS Breakdown Voltage-Min
3.5 V
Transistor Element Material
GALLIUM ARSENIDE