INFINEON TECHNOLOGIES AG CFY66-08PES | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG CFY66-08PES

生命周期状态
Transferred
REACH
REACH compliant
说明
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e3
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
K BAND
Power Gain-Min (Gp) (dB)
10
Drain Current-Max (ID) (A)
0.06
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3.5
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
0.2
Screening Level / Reference Standard
ESA-SCC-5613/002