Siemens AG CFY19-18 | 搜芯易Sourcengine

Siemens AG CFY19-18

生命周期状态
Transferred
说明
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
J-STD-609 Code
e0
Operating Mode
DEPLETION MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
C BAND
Power Gain-Min (Gp) (dB)
9.5
Drain Current-Max (ID) (A)
0.08
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
6
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
0.35