CELERITEK INC CFK2062-P1 | 搜芯易Sourcengine

CELERITEK INC CFK2062-P1

生命周期状态
Transferred
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G8
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Drain Current-Max (ID) (A)
1.4
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
10
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
6