CHINO-EXCEL TECHNOLOGY CO LTD CES2310 | 搜芯易Sourcengine

CHINO-EXCEL TECHNOLOGY CO LTD CES2310

生命周期状态
Contact Mfr
说明
Power Field-Effect Transistor, 4.8A I(D), 30V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.25
Drain Current-Max (ID) (A)
4.8
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
26
DS Breakdown Voltage-Min (V)
30
Feedback Cap-Max (Crss) (pF)
65
Turn-off Time-Max (toff) (ns)
84
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.25
Pulsed Drain Current-Max (IDM) (A)
20
Drain-source On Resistance-Max (ohm)
0.034