CHINO-EXCEL TECHNOLOGY CO LTD CEI655N | 搜芯易Sourcengine

CHINO-EXCEL TECHNOLOGY CO LTD CEI655N

生命周期状态
Contact Mfr
说明
Power Field-Effect Transistor, 15A I(D), 150V, 0.153ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
15 A
Turn-on Time-Max (ton)
135 ns
Feedback Cap-Max (Crss)
70 pF
DS Breakdown Voltage-Min
150 V
Turn-off Time-Max (toff)
170 ns
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
83 W
Transistor Element Material
SILICON
Power Dissipation Ambient-Max
83 W
Drain-source On Resistance-Max
0.153 ohm
Pulsed Drain Current-Max (IDM)
60 A