CHINO-EXCEL TECHNOLOGY CO LTD CEF04N6 | 搜芯易Sourcengine

CHINO-EXCEL TECHNOLOGY CO LTD CEF04N6

生命周期状态
Contact Mfr
说明
Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
4 A
Turn-on Time-Max (ton)
170 ns
Feedback Cap-Max (Crss)
20 pF
DS Breakdown Voltage-Min
600 V
Turn-off Time-Max (toff)
270 ns
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
35 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
240 mJ
Power Dissipation Ambient-Max
89 W
Drain-source On Resistance-Max
2.5 ohm
Pulsed Drain Current-Max (IDM)
16 A