Central Semiconductor Corp. CDM2206-800LR | 搜芯易Sourcengine

Central Semiconductor Corp. CDM2206-800LR

生命周期状态
EOL
说明
MOSFET N-CH 800V 6A TO220
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
800 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
110 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
250 mJ
Drain-source On Resistance-Max
0.95 ohm
Pulsed Drain Current-Max (IDM)
24 A