ASI Semiconductor, Inc. CBSL1SL | 搜芯易Sourcengine

ASI Semiconductor, Inc. CBSL1SL

生命周期状态
Active
说明
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CRDB-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
7
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.25
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
28
Collector-base Capacitance-Max (pF)
5