WOLFSPEED INC CAB006A12GM3T | 搜芯易Sourcengine

WOLFSPEED INC CAB006A12GM3T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
1200 V, 6 mΩ, GM, Half Bridge (AlN substrate), Industrial qualified, SiC Power Module with Pre-Applied Thermal Interface Material (TIM)
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUFM-X38
Configuration
2 N-Channel (Half Bridge)
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
2
Number of Terminals
38
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.01
Drain Current-Max (ID) (A)
200
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Feedback Cap-Max (Crss) (pF)
43
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Pulsed Drain Current-Max (IDM) (A)
400
Drain-source On Resistance-Max (ohm)
0.0069
Screening Level / Reference Standard
IEC-60747-8-4
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED