HARRIS SEMICONDUCTOR CA3127F | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR CA3127F

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.02A I(C), 5-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.5 V
JESD-30 Code
R-CDIP-T16
Configuration
SEPARATE, 5 ELEMENTS WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
5
Number of Terminals
16
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
35
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
0.02 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
15 V
Transition Frequency-Nom (fT)
1150 MHz