HARRIS SEMICONDUCTOR CA3086MM96 | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR CA3086MM96

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-012AB
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G14
Configuration
COMPLEX
JEDEC-95 Code
MS-012AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
5
Number of Terminals
14
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
40
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.05 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
15 V
Transition Frequency-Nom (fT)
550 MHz