HARRIS SEMICONDUCTOR CA3018AT | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR CA3018AT

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.05A I(C), 4-Element, Very High Frequency Band, Silicon, NPN, MO-006AG
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.5 V
JESD-30 Code
O-MBCY-W12
Configuration
COMPLEX
JEDEC-95 Code
MO-006AG
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
Terminal Position
BOTTOM
Number of Elements
4
Number of Terminals
12
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
Highest Frequency Band
VERY HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
50
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.05 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
15 V
Transition Frequency-Nom (fT)
500 MHz