WOLFSPEED INC C3M0160120J | 搜芯易Sourcengine

WOLFSPEED INC C3M0160120J

生命周期状态
Active
RoHS
符合RoHS标准
说明
1200 V, 160 mΩ, TO-263-7 package, Industrial qualified, Discrete SiC MOSFET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G7
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
90
Drain Current-Max (ID) (A)
17
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Feedback Cap-Max (Crss) (pF)
3
Peak Reflow Temperature (Cel)
245
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
34
Drain-source On Resistance-Max (ohm)
0.208
Screening Level / Reference Standard
IEC-60747-8-4
Time@Peak Reflow Temperature-Max (s)
30