WOLFSPEED INC C3M0021120D | 搜芯易Sourcengine

WOLFSPEED INC C3M0021120D

生命周期状态
Active
RoHS
符合RoHS标准
说明
1200 V, 21 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
469
Drain Current-Max (ID) (A)
81
Transistor Element Material
SILICON CARBIDE
DS Breakdown Voltage-Min (V)
1200
Feedback Cap-Max (Crss) (pF)
12
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Pulsed Drain Current-Max (IDM) (A)
200
Drain-source On Resistance-Max (ohm)
0.0288
Screening Level / Reference Standard
IEC-60747-8-4
Time@Peak Reflow Temperature-Max (s)
10