HARRIS SEMICONDUCTOR C358T | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR C358T

生命周期状态
Discontinued
说明
Silicon Controlled Rectifier, 240A I(T), 900V V(DRM)
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SCR

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Holding Current-Max
500 mA
Leakage Current-Max
9 mA
Trigger Device Type
SCR
On-state Current-Max
240 A
Operating Temperature-Max
125 Cel
Operating Temperature-Min
-45 Cel
DC Gate Trigger Current-Max
150 mA
DC Gate Trigger Voltage-Max
3 V
Non-Repetitive Pk On-state Cur
1600 A
Repetitive Peak Off-state Voltage
900 V
Critical Rate of Rise of Off-state Voltage-Min
200 V/us