C203B
Toshiba Corporation
- 生命周期状态Active-Unconfirmed
- 说明Silicon Controlled Rectifier, 0.8A I(T), 200V V(DRM)
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Holding Current-Max5 mA
- Leakage Current-Max0.001 mA
- Trigger Device TypeSCR
- On-State Voltage-Max1.5 V
- On-state Current-Max0.8 A
- Operating Temperature-Max125 Cel
- Operating Temperature-Min-60 Cel
- DC Gate Trigger Current-Max0.2 mA
- DC Gate Trigger Voltage-Max0.8 V
- Non-Repetitive Pk On-state Cur8 A
- Repetitive Peak Off-state Voltage200 V
- Circuit Commutated Turn-off Time-Nom15 us
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C203B