HARRIS SEMICONDUCTOR C106B | 搜芯易Sourcengine

HARRIS SEMICONDUCTOR C106B

生命周期状态
Discontinued
说明
Silicon Controlled Rectifier, 4A I(T), 200V V(DRM)
类别
Semiconductors Trigger Devices Silicon Controlled Rectifiers SCR

ECCN
EAR99
ECCN Governance
EAR

JESD-609 Code
e0
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Holding Current-Max
3 mA
Leakage Current-Max
0.1 mA
Trigger Device Type
SCR
On-state Current-Max
4 A
Operating Temperature-Max
110 Cel
Operating Temperature-Min
-40 Cel
DC Gate Trigger Current-Max
0.2 mA
DC Gate Trigger Voltage-Max
0.8 V
Non-Repetitive Pk On-state Cur
20 A
Repetitive Peak Off-state Voltage
200 V
Circuit Commutated Turn-off Time-Nom
40 us
Critical Rate of Rise of Off-state Voltage-Min
8 V/us