INFINEON TECHNOLOGIES AG BUZ74-E3045 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BUZ74-E3045

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2.4 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
500 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
180 mJ
Drain-source On Resistance-Max
3 ohm
Pulsed Drain Current-Max (IDM)
9.5 A