INFINEON TECHNOLOGIES AG BUZ312 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BUZ312

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 6A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-218AA
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
6 A
DS Breakdown Voltage-Min
1000 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
150 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
830 mJ
Drain-source On Resistance-Max
1.5 ohm
Pulsed Drain Current-Max (IDM)
24 A