Siemens AG BUZ12A-E3046 | 搜芯易Sourcengine

Siemens AG BUZ12A-E3046

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
42
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
180
DS Breakdown Voltage-Min (V)
50
Feedback Cap-Max (Crss) (pF)
420
Turn-off Time-Max (toff) (ns)
460
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
125
Avalanche Energy Rating (Eas) (mJ)
41
Pulsed Drain Current-Max (IDM) (A)
168
Drain-source On Resistance-Max (ohm)
0.035