INFINEON TECHNOLOGIES AG BUZ100L | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BUZ100L

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 60A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Drain Current-Max (ID) (A)
60
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
50
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
250
Pulsed Drain Current-Max (IDM) (A)
240
Drain-source On Resistance-Max (ohm)
0.018