INFINEON TECHNOLOGIES AG BUY25CS54A-01 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BUY25CS54A-01

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 54A I(D), 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
54
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
250
Avalanche Energy Rating (Eas) (mJ)
380
Pulsed Drain Current-Max (IDM) (A)
214
Drain-source On Resistance-Max (ohm)
0.03
Screening Level / Reference Standard
ESA/SCC 5205/027; RH - 100K Rad(Si)