INFINEON TECHNOLOGIES AG BUY06CS35J-01 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG BUY06CS35J-01

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 35A I(D), 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
35
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
38
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
105
Turn-off Time-Max (toff) (ns)
40
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
200
Pulsed Drain Current-Max (IDM) (A)
100
Drain-source On Resistance-Max (ohm)
0.035
Screening Level / Reference Standard
ESA/SCC 5205/032; RH - 100K Rad(Si)