BUY06CS23K-01(ES)
INFINEON TECHNOLOGIES AG
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 23A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-XSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-257AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)75
- Drain Current-Max (ID) (A)23
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)38
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)105
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)40
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)200
- Pulsed Drain Current-Max (IDM) (A)100
- Drain-source On Resistance-Max (ohm)0.04
- Screening Level / Reference StandardESCC 5205/032; 100K Rad(Si)
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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BUY06CS23K-01(ES)