- 生命周期状态Discontinued
- 说明Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max0.8 V
- JESD-30 CodeO-MUPM-D3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-63
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Terminal PositionUPPER
- Additional FeatureLOW LEAKAGE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)15
- Collector Current-Max (IC)20 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max200 V
- Power Dissipation Ambient-Max175 W
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