Siemens AG BUP314 | 搜芯易Sourcengine

Siemens AG BUP314

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, TO-218
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
MOTOR CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-218
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
3.2
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Fall Time-Max (ns)
60
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
100
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
110
Turn-on Time-Nom (ton) (ns)
75
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Max (toff) (ns)
560
Turn-off Time-Nom (toff) (ns)
420
Collector Current-Max (IC) (A)
52
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Power Dissipation Ambient-Max (W)
300